Abstract
A complex magnetic resonance study (EPR, electrically detected EPR, ENDOR) of hydrogen-related radiation-induced shallow donors in silicon has been performed. Three species of this donor family (D1–D3) were observed earlier by means of infrared absorption measurements in hydrogenated Czochralski-grown Si crystals after irradiation with fast electrons and subsequent annealing in the temperature range of 300–550°C. Hydrogen incorporation into the D1 and D2 centers was confirmed by the observation of resonance lines due to hyperfine (hf) interactions of an unpaired electron with the 1H and 2H nuclei in ENDOR spectra. Parameters of the hf interactions were determined from the analysis of angular dependencies of the ENDOR lines. The observed EPR and ENDOR signals are compared with those due to Si-NL10(H) shallow thermal donors and possible atomic structures and formation mechanisms of the defects, which give rise to these spectra, are discussed.
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