Abstract
Although hot carrier failure in very short channel (<0.35 μm) p-MOS transistors is often described in terms of threshold voltage ( V t) shifts, a more meaningful hot carrier indicator for dynamic logic is the leakage current, I d.off (measured at V d = −3.6V, V g = −0.1V). A new method for determining the hot carrier failure time based on the leakage current is proposed here. This method has the advantage of being independent of the initial threshold voltage. A relationship is proposed that links the leakage current to the effective length of the transistor. With this relationship, it is possible to quickly screen for whether devices meet the hot carrier criterion, by simply measuring the leakage current and the effective channel length.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.