Abstract
Undoped semi-insulating GaAs single crystals with up to 2 inch diameter and 400 mm length were grown by a horizontal boat growth method using a quartz ampoule, a PBN boat and a B 2O 3 encapsulant. A good quality crystal with an average dislocation density of less than 3 000 cm −2 was successfuly grown. The resistivity of an as-grown crystal ranged from 10 5 to 10 7 Ω cm, which could be increased up to 10 8 Ω cm through wafer annealing at 1150°C for 5 h under 1 atm arsenic gas pressure. These results indicate that the horizontal boat growth method has potential to provide low EPD, semi-insulating GaAs substrates for advanced electronic devices.
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