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https://doi.org/10.1016/0022-0248(94)00985-6
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Cite Journal: Journal of Crystal Growth |  Publication Date: May 1, 1995 |
 Citations: 1 |
Affiliation: AT&T (United States)
The in-situ process combines film growth and device fabrication steps which take place under an ultra-high vacuum (UHV) or a controlled ambient environment. Processing, materials, and devices produced using this technique with molecular beam epitaxy (MBE) are reviewed.
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