Abstract

New formulae for simulating nuclear stopping processes are fitted for the Universal interatomic potential. In addition to the incident-ion energy variable, a new impact parameter variable is suggested in the new fitting formulae. Nuclear stopping up to the third moment is considered in this work, and the new formulae were least-squares fitted to the exact solution at an average relative error of less than 0.2%. With the inclusion of these three moments of nuclear stopping, and these two independent variables, good agreement between theoretical results and experimental data in the projected ranges of bismuth ions implanted in silicon is demonstrated.

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