Abstract
A new accelerometer based on an FET sensing element and surface-micromachining technology has been designed and fabrieted. A new process to avoid sticking during processing has been developed. In this new process, the sacrificical layer is etched before polysilicon structuring, defining a sealed vacuum cavity. Finally the accelerometer structure is defined with dry etching on this cavity, avoiding any wet etching process and, in consequences, the sticking of the polysilicon structure on the substrate. The sensing element of the accelerometer is a transistor FET. So the mass of the accelerometer acts as a gate of the transistro, changing the value of the threshold voltage, V T, with the acceleration. Preliminary results show a high sensitivity with a much simpler readout compared to capacitive sensors.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
