New features of real-space hot-electron transfer in the NERFET

Abstract

We report two new effects of negative differential resistance in the modulation doped AlGaAs/GaAs Negative Resistance Field Effect Transistor. Both effects are well controlled by a third electrode. Presence of a top n + AlGaAs layer causes a hot-electron real-space transfer to this layer and prevents the electron transfer to the collector. Creation of the high-field domain in the source-drain channel is needed to activate the the hot-electron injection to the collector. The real-space transfer to the top n + AlGaAs layer combined with the quenching of the high-field domain by the collector bias are responsible for the appearance of the observed new negative differential resistance effects.