Abstract
A new SCR with the variation lateral base doping (VLBD) structure (VSCR) is proposed to improve the turn-on speed for electrostatic discharge (ESD) protection. The turn-on speed of the SCR was determined mainly by the base transit time of the parasitic p-n-p and n-p-n transistors of the SCR, and the VLBD structure can reduce the base transit time of the bipolar transistors to improve the turn-on speed of the SCR. The experimental and simulation results show that the turn-on time of the VSCRs with the VLBD structure is 12% less than that of the MLSCR with the traditional uniform base doping without adding extra process masks and increasing the chip area.
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