Abstract
We present measurements of 1/ f resistance noise in three different films of amorphous silicon (a-Si) in the presence of a transverse electric current. Two of these films have a nin sandwich structure-in one of them all three layers were hydrogenated; in the other one only the n-layers were hydrogenated, while the intrinsic layer was deuterated. The third film had pip structure with all three layers hydrogenated. The experimental spectra were found to be in a very good quantitative agreement with theoretical predictions, which were based on the mechanism involving long-range fluctuations of the Coulomb potential created by charged defects.
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