New Electrically Thinned Intrinsic-Channel SOI MOSFET with 0.01 µm Channel Length

Abstract

In an ultrasmall device with a channel length of 0.01 µm, only one impurity atom on the average exists in the channel region even though the impurity concentration is higher than 5.0×1018 cm-3. Therefore, the device characteristics significantly change from device to device within a wafer, or even within a chip, due to the statistical variation of the impurity concentration. We investigated the influences of isolated atoms in the channel region on the device characteristics based on a Monte Carlo simulation and propose a new 0.01 µm silicon-on-insulator metal oxide semiconductor field-effect transistor (SOI MOSFET) with undoped channel to suppress the influences of statistical variation and the short channel effect.