Abstract
In this study, the infrared optically-stimulated luminescence (IR-OSL) of single crystals of Ce3+ doped Gd3(GaxAl5−x)O12 mixed garnet with Ga content x = 2.5, 2.7, 3 was investigated for the first time. It was demonstrated that infrared stimulation of these crystals previously exposed to beta radiation produces a strong luminescence signal comparable with conventional OSL phosphors. The intensity of the IR-OSL highly depends on Ga content, reaching maximum for x = 2.5. The IR-OSL decay curves are multicomponent, with predominant fast components with the decay time around 1 s. The relation between IR-OSL and thermoluminescence was also studied. It was found that the most intense fast components of IR-OSL decay are related to the low-temperature peaks in thermoluminescence glow curves occurring at the temperature range 78–96 °C. The observed high intensity of the IR-OSL signal creates perspectives for possible applications of Gd3(GaxAl5−x)O12 mixed garnet crystals for passive radiation measurements and dosimetry.
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