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Abstract
Recent work on new device applications of band edge discontinuities in molecular beam epitaxial multilayer heterostructures is discussed. Band discontinuties can be used to control the “real space” transfer of electrons between sets of layers (negative resistance, switching and storage devices). Another application deals with the possibility of enhancing the ionization rates ratio via the asymmetry between conduction and valence band discontinuities (superlattice photodetectors). Finally a multistage graded gap structure, the solid-state analog of a photomultiplier (staircase APD), has been disclosed.
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