Conduction and Valence Band Discontinuities in Some New Semiconductor Heterojunctions

Abstract

Conduction and valence band discontinuities (band offsets) in the heterojunctions consisting of ZnO/4H-SiC, ZnO/GaAs, MgO/4H-SiC, MgO/AIN, InN/ZnO, InN/GaAs, MgO/InN, and InN/4H-SiC, were precisely determined by X-ray photoelectron spectroscopy (XPS) measurement. As an example, the XPS measurement on the ZnO/4H-SiC heterojunction is described in detail in the beginning of the section of the experiments. We also analyzed several factors which may have impact on the band offset in a practical heterojunction. The deviation in band offset induced by both polar and non-polar heterojunction band bending from the true value was also characterized by taking into account the intrinsic polarization field in the heterojunction consisting of the two polar materials.