Abstract
The intrinsic II–VI semiconductor Hg 1−x Cd x Te is the most important material for medium-wavelength (3–5 μm) and longwavelength (8–14 μm) IR detectors. Recent advances in the epitaxial growth of this ternary alloy are the main reason for its technological success in second-generation devices. In particular, liquid-phase epitaxy (LPE) structures (from Te-rich and Hg-rich solution) are nowadays the most interesting for advanced focal plane array fabrication. The complexity of required structures continue to increase in the following directions: (1) the number of epitaxial layers from which the structures needed for device generation are composed (heterojunctions), coupled with their precise doping control; (2) the use of alternative substrates to bulk CdZnTe allowing very-large-area (10 cm 2 or greater) structure preparation at reduced cost. The more recent development in the LPE HgCdTe heterojunction fabrication will be reported in this paper as well as the state of the art concerning the growth on sapphire and silicon-based hybrid substrates. The on-line materials characterization methods and results will be discussed from the viewpoint of a crystal growth laboratory technologically oriented.
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