Abstract
Abstract Controlling the nucleation and growth processes is important for growing large, high-quality crystals of oxides, proteins, and nitrides from a solution. We must understand how the solution conditions should be controlled, and determine a universal principle that is applicable to the growth of various high-quality crystals. In this report, we will present the effects of solution stirring and nucleation control on the solution growth of CsLiB 6 O 10 (CLBO), proteins, and GaN crystals with respect to the following issues: (1) effect of solution stirring on the growth of high-quality CLBO crystals, (2) high-quality protein crystal growth by means of forced nucleation induced by laser irradiation and the solution-stirring method, and (3) high-quality 2-in GaN crystal by Na flux liquid-phase epitaxy method.
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