Abstract

Controlling the nucleation and growth processes is important for growing large, high-quality crystals of oxides, proteins, and nitrides from a solution. We must understand how the solution conditions should be controlled, and determine a universal principle that is applicable to the growth of various high-quality crystals.In this report, we will present the effects of solution stirring and nucleation control on the solution growth of CsLiB6O10 (CLBO), proteins, and GaN crystals with respect to the following issues: (1) effect of solution stirring on the growth of high-quality CLBO crystals, (2) high-quality protein crystal growth by means of forced nucleation induced by laser irradiation and the solution-stirring method, and (3) high-quality 2-in GaN crystal by Na flux liquid-phase epitaxy method.

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