Abstract
New data on radiation centers of the RC series are obtained by studying the photoluminescence of boron nitride cubic crystals irradiated with electrons of energies of 150 to 300 eV and annealed in vacuum at temperatures of 400 to 800°C. Changes in the fine structure of no-phonon lines from these centers were observed as the electron energy reached the “threshold” value or after annealing. These changes are likely to be associated with the response of a vacancy (which is a structural element of RC defects) to differently directed uniaxial stresses. The fine structure of the no-phonon line from the RC3 center is less sensitive to threshold effects and relaxes more easily during annealing in comparison with those from the RC1 and RC2 centers. New data are obtained on the fine structure of phonon replicas of no-phonon lines from RC centers; this structure is due to interaction of the corresponding electron transitions with lattice phonons of energies of 0.1 to 0.125 eV.
Published Version
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