New concept for ultra small N-MOSFET's

Abstract

We present an alternative concept of ultra small MOSFET transistors based on self-adjusting CMOS techniques. Devices with standard transistor characteristics, but substantially smaller geometric requirements have been fabricated. The heart of these devices is a triangular-shaped silicon wire connecting the source and drain areas performed on SOI substrate material. This faceted wire has been realised by anisotropic wet etching of the silicon using KOH. A thin gateoxide with a polysilicon gate-material on top offers self-aligning channel definition. Characterisation at room temperature proves the good electrical properties of the transistor.