Silicon slot fin waveguide on bonded double-SOI for a low-power accumulation modulator fabricated by an anisotropic wet etching technique.

Abstract

We propose a new low VπL, fully-crystalline, accumulation modulator design based on a thin horizontal gate oxide slot fin waveguide, on bonded double Silicon-on-Insulator (SOI). A combination of anisotropic wet etching and the mirrored crystal alignment of the top and bottom SOI layers allows us for the first time to selectively pattern the bottom layer from above. Simulations presented herein show a VπL = 0.17Vcm. Fin-waveguides and passive Mach-Zehnder Interferometer (MZI) devices with fin-waveguide phase shifters have been fabricated, with the fin-waveguides having a transmission loss of 5.8dB/mm and a 13.5nm thick internal gate oxide slot.