New charge pumping current model assuming exponential tails in the trap energy distribution

Abstract

In this letter, a new charge pumping current expression is derived by assuming an exponential distribution of traps. This modified expression leads to a different method of extracting the trap emission time constant. This approach is applied on FinFET transistors with high- $\kappa $ replacement metal gate stack to evaluate experimentally the impact of this correction compared to the original expressions from the previous works. It is found that the difference with customary methods is small, although it may potentially distort the temperature dependence of the trap emission rate.