Abstract
Abstract A new BiFET composite unit comprising two BJT's, one JFET and two passive resistors is described and, as a unit, shown to exhibit FET-like characteristics with much improvement in thermal stability and transfer curve linearity over a wide range of input bipolar voltage and temperature variations. The forward transfer admittance of the unit may easily be adjusted over a wide range. A differential voltage amplifier using the proposed unit is also described. A computer simulation as well as experimental results are given to validate the analytical conclusions.
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