Abstract
Spontaneous formation of CdSe/ZnSe quantum dots (QDs) in ultra high vacuum (UHV) by molecular beam epitaxy (MBE) was investigated using cleavage-induced GaAs (1 1 0) surfaces as substrates. Stranski-Krastanow (SK)-type CdSe QDs were randomly distributed on the atomically flat surface. On the other hand, QD structures were abnormally formed at the macroscopic steps produced by the cleaving process of the substrates. These QDs were naturally arranged along the edge of the steps. Microscopic photoluminescence (PL) spectra of the QDs at step regions showed a few number of sharp peaks originating from the individual QDs. Therefore, the cleaved edge overgrowth technique is a novel method for fabrication of isolated CdSe QDs which is useful to investigate optical properties of individual QD structures.
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