Abstract
The main purpose of this study is to introduce a new way to build a high voltage (HV) level shifter based on new HV N/P MOS transistors. The approach is to develop and to characterize dual HV MOS devices in thin silicon film on the 28 nm UTBB FDSOI technology . Afterwards, a basic level shifter design allows to translate 10V on input signal to 1V on the output signal for a direct application in the standard thin oxide MOS device(s). The HV N/P MOS devices and the level shifter characterizations demonstrate that this new concept provides an easy and efficient solution to design at layout level this kind of devices or IP block with the standard process. Thus, this solution is without process extra cost and it is an adaptative design solution for dedicated applications.
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