Abstract
Neutron transmutation doping (NTD) was applied to produce a stable isotope 31P admixture in thin silicon films electrodeposited on glassy carbon (GC) from the KF-KCl (2:1)—75 mol% KI—0.5 mol% K2SiF6 melt. The irradiation of samples with 5 and 15 μm silicon film thickness was carried out under the neutron flux density of 1.46 × 1012 cm–2 s–1 for 168 h at 318 K in the IVV-2M research reactor (RR). The irradiated samples were studied by methods of gamma-ray and mass spectrometry, scanning electron microscopy with energy-dispersive X-ray spectroscopy (SEM-EDS). Impurities the activities of which reach levels above the minimum significant ones (MSA) were detected and identified. The presence of 31P atoms (∼1.1 × 1014 cm–3) in thin silicon films after the NTD process was confirmed. The specific electrical resistance of the irradiated samples was evaluated. Arrangements were defined to optimize the NTD process for obtaining acceptable results, including a higher 31P concentration and lower exposure time to achieve the minimum significant specific activity (MSSA).
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