Abstract
The neutron transmutation doping (NTD) process in silicon is based upon nuclear reactor thermal neutron irradiation which induces the neutron capture reaction 30Si (n,?) 31Si ? 31P + s-. The transmutation product, phosphorus, becomes electrically active after suitable annealing of the accompanying radiation damage which is caused by a number of displacement processes. Because of the superior doping homogeneity which results from the NTD process, a number of device applications have evolved resulting in a significant fraction of the world's float zone being neutron doped. This paper will present a review of basic research and production techniques which have evolved at MURR as a result of work associated with this new radiation effects technology.
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