Abstract
As SRAM is scaled down to a smaller size, it will induce multi-bit upset(MBU) when incident neutron react with silicon material. Based on Geant4, compound sensitive volume and multi-sensitive volume model are constructed to predict single-bit upset (SEU) and MBU caused by the single event effect of neutron. The prediction of SRAM upset of 40nm bulk silicon technology is carried out with this model. The results show that the prediction results in this paper are in good agreement with the actual test results, which proves the accuracy of the model.
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