Abstract
Irradiations of silicon microstrips and test devices have been carried out using a neutron source with an energy spectrum similar to that produced in hadron colliders. These are part of a systematic study of radiation damage in silicon detectors for SSC or LHC applications and the test structures are examples of components integrated into microstrip detectors. Exposures of up to 10 15 neutrons/cm 2 have been made. Device parameters, including leakage currents, capacitance and resistance, have been measured and damage constants and their dependence on neutron fluence and operating temperature extracted. The effects of radiation damage to the bulk silicon and its influence on charge collection have been observed.
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