Neutron Irradiation of AlGaN Polarization Doped Field Effect Transistors

Abstract

AlGaN polarization doped field effect transistors (POLFETs) were irradiated with neutrons at an average energy of 4.5 MeV and doses of 5 × 1010 n/cm−2 and 5 × 1011 n/cm−2. Only 1% and 3% reduction in DC current was noted at these fluences, respectively. Drain and gate leakage current was only found to have degraded at 5 × 1011 n/cm−2, lower fluences producing nominal changes. 100 kHz operation demonstrated near ideal performance prior to irradiation, and only slight degradation after for most stringent duty cycles and highest gate voltages used in this study.