Alpha Particle Irradiation of High Aluminum Content AlGan Polarization Doped Field Effect Transistors

Abstract

Alpha particle irradiation at 18 MeV was performed on high aluminum content AlGaN Polarization Doped Field Effect Transistors (POLFTs) and characterized by DC and switching measurements. The POLFETs underwent a reduction in DC saturation current of 23% and 33% at fluences of 1 × 1013 cm−2 and 3 × 1013 cm−2, respectively. Carrier removal rates in the range of 2520 cm−1 and 7100 cm−1 were observed, which are similar to previously reported values for GaN HEMTs. The POLFETs under 100 kHz gate lag measurement demonstrated zero degradation while compared to a traditional GaN HEMT device which suffered serious current collapse as a result of formation of a virtual gate from radiation-induced defects.