Abstract
This paper analyses the neutron irradiation impact on the electrical performances of unstressed, ON-state, OFF-state, and negative gate bias (NGB) stressed AlInN/GaN HEMTs. These irradiations have resulted in the creation of electron traps that are causing a decrease in the drain current and an increase in the access resistance of the unstressed, ON-state, or OFF-state stressed AlInN/GaN devices. These degradations have been correlated with gamma spectrometry measurements and transmutation reactions occurred during the thermalized neutron irradiation have been highlighted. Despite these phenomena, a rise in drain current and a reduction in access resistance have been observed when NGB stressed AlInN/GaN HEMTs were irradiated with a fluence of $1.2\times 10^{\mathbf {12}}$ neutrons/cm2. The differences between the electrical behaviors of unstressed, ON-state, OFF-state, and NGB stressed devices observed after the neutron bombardment are related to the presence of electron traps in these device structures.
Published Version
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