Abstract
Results of neutron induced single event upset (SEU) testing of two Synchronous Burst Static Random Access Memory (SRAM) devices, the Galvantech GVT71128G36 128K x 36 and the GSI GS816273CC 256K x 72, and the internal RAM (iRAM) in the Texas Instruments SM32C6713BGDPA20EP Digital Signal Processor (DSP) are described. Four samples of each device type were irradiated with a 14-MeV neutron source, with and without a polyethylene moderator. The units were irradiated using a continual read/write correct loop using several bit patterns. All units-under-test were operated during irradiation using the respective operating datasheet supply potential. It is noted that one of these devices exhibited a large low energy (< 1MeV) neutron cross section.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
