Abstract
Results of neutron induced single event upset testing of devices with embedded error correction codes are described. Specifically, Cypress CY7C1061GE30-10BVXI and CY7C1061GE-10BVXI 16-Mbit Static Random Access Memories (SRAMs), and a memory system, consisting of a Tundra Tsi107 PowerPC Host Bridge interfacing with nine Micron MT48LC32M8A2TG-75ITD 256-Mbit Synchronous Dynamic Random Access Memories (SDRAMs). Four samples of each memory system or device type were irradiated with a 14-MeV neutron source. The units were irradiated using a continual read/write correct loop using several bit patterns. Results for both correctable and uncorrectable errors are presented along with cross section data and soft error rates.
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