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Explore Editage All Accesshttps://doi.org/10.1109/tns.2011.2180924
Copy DOI Journal: IEEE Transactions on Nuclear Science |  Publication Date: Aug 1, 2012 |
 Citations: 41 |
Affiliation: IMEC, Universidade Federal do Rio Grande do Sul, Universidade Federal do Rio Grande, Montpellier Laboratory of Informatics, Robotics and Microelectronics, University of Montpellier, French National Centre for Scientific Research, Institut d'Électronique et des Systèmes, KU Leuven, ASML (Netherlands)50 MeV and 80 MeV neutron-induced failure is investigated for several types of power devices (super-junction, IGBT and SiC) from different vendors. A strong dependence on the device type and orientation is observed.
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