Abstract
It is shown by means of the thermal neutron diffraction method that, during the doping of Zn-chalcogenide semiconductor crystals with 3d ions, elongated distortions whose spatial topology depends on the type of impurity can be formed in the sphalerite modification based on the initial crystal structure. Experimental results are discussed using the concept of vibronic interaction induced by foreign ions with partially filled outer electron shells in the cubic crystal field.
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