Abstract
A high current NIABNIS has been developed for negative ion beam applications such as negative ion beam deposition and negative ion implantation. In the NIABNIS, a sputter cone for negative ion production is placed on a cesium ion extractor of a cesium plasma ion source in order that a large amount of cesium ions together with controlled neutral cesium particles are simulteneously bombarded on the sputter cone surface. The temperature of the sputter cone can be controlled. Thus, the optimal surface for the negative ion production with the minimum work function can be obtained. Ion beams of 0.74 mA for C −, 320 μA for Cu −, and 170 μA for Si − were produced, and are adequate for negative ion beam applications. A mass-separated negative ion beam deposition system with the NIABNIS was developed and a transparent carbon film of several thousands of Å in thickness was deposited by using a C − ion beam with an energy of 10–1000 eV. A negative ion implanter with the NIABNIS in which an ion beam was accelerated to an energy of 5–60 keV was also developed and experiments such as destructive cross-section of negative ion beams with gases and SiC formation by C − ion implantation into Si substrates were performed.
Published Version
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