Abstract
The emission of ionic and neutral particles, resulting from irradiation of a GaAs surface by 1064, 532, 355 and 266 nm Q-switched Nd:YAG laser light, has been studied. Incident laser power densities up to 9.6 × 107 Watts/cm2 have been applied. For 1064, 532 and 355 nm radiations the ratios of ionic to neutral particle emissions are close to the thermal ratio corresponding to the boiling point of Ga. In the case of 266 nm radiation this ratio appears to be higher, which is probably due to non-thermal ion contributions. For several incident wavelengths the emitted yields of ions and neutrals varied with the fifth power of the incident laser power density. The wave form of the emitted ion pulse and the recorded mass spectrum after irradiation at 266 nm differ significantly from those obtained at the other applied wavelengths.
Highlights
Some experimental studies have been performed concerning the particle emission from a GaAs surface as a consequence of irradiation by Nd:YAG and ruby laser beams.1’2 Such studies yield data which can be used to estimate the substrate losses if laser irradiation is applied for the annealing of ion-implanted semiconductors
The apparatus used in the present experiment is essentially the same as that applied in Ref. 1, and will only briefly be described here. It consists of a (1-200 a.m.u.) quadrupole mass spectrometer (QMS) placed inside a vacuum chamber which is equipped with a sapphire window for the transmission of the laser light
The mass losses owing to irradiation at the ruby laser wavelength and calculated from the corresponding Rutherford-Back-Scattering experiments of Ref. 2 have been presented in Figure 3 for some energy densities
Summary
Some experimental studies have been performed concerning the particle emission from a GaAs surface as a consequence of irradiation by (unfocussed) Nd:YAG and ruby laser beams.1’2 Such studies yield data which can be used to estimate the substrate losses if laser irradiation is applied for the annealing of ion-implanted semiconductors. It appeared that laser irradiation of GaAs by 1064 nm Q-switched Nd:YAG laser light resulted in the emission of mainly Ga/ atomic ions, Ga atomic neutral and As2 neutral molecules. The measurement of the temporal wave form of the emitted ion pulses yields information about the kinetic energy of the released particles and of the time character of the emission process
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