Abstract
The present work reports a modification in the design of the previously known Ag/Ag2S neuron-inspired devices by the addition of a modulating layer of graphene oxide (GO). The Ag2S/GO structures were fabricated with a simple yet effective method consisting of the sulfurization of high-purity silver wires dip-coated in GO solution. The structure was observed to maintain the switching characteristics of Ag2S, but also to exhibit tunneling OFF state currents modulated by the GO thin film layer. This result was also confirmed through the direct observation of the Ag2S/GO surface with a scanning electron microscope. The notable volatility-based neuromorphic properties observed in Ag2S were enhanced in the presence of GO, and a switching model is proposed considering the present experimental results. The ultra-thin insulating nature of GO emphasizes its potential modulating capabilities, and the results suggest that GO may be an important addition for future electrochemical resistive switching based neuron-inspired devices.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
