Abstract
A low molecular weight organic compound containing bis-phenol A backbone (BPA-6OH) is reported as a negative-tone photoresist. This material has a high glass transition temperature and excellent thermal stability. A good contrast, well-resolved line pattern around 73.4 nm and sensitivity of 52 µC cm−2 can be received for negative-tone molecular glass photoresist upon exposure in electron beam lithography system. It indicates that the negative-tone molecular glass photoresist is one of the promising candidates for use in electron beam lithography.
Highlights
Modern high-performance electronic devices require integrated circuits to be smaller and smaller, more efficient, and more powerful
Photolithography has evolved from G-line (436 nm), I-line (365 nm) lithography, to deep ultraviolet (248 nm, 193 nm), and to more advanced lithography– extreme ultraviolet lithography [6,7,8], and electron beam lithography (EBL) is a competitive option for high integration
Our group has reported a novel chemically amplified positive-tone photoresist based on bis-phenol A structure for extreme ultraviolet lithography [9]
Summary
Modern high-performance electronic devices require integrated circuits to be smaller and smaller, more efficient, and more powerful. The most common electron beam resists are non-chemically amplified resists, such as PMMA [27], HSQ [28] and ZEP [29]. They possess high resolution at the cost of the sensitivity. Our group has reported a novel chemically amplified positive-tone photoresist based on bis-phenol A structure for extreme ultraviolet lithography [9]. We report a negative-tone molecular glass photoresist based on bis-phenol A backbone (BPA-6OH) for electron beam lithography. The negative-tone molecular glass photoresist gives a resolution as small as 73.4 nm, sensitivity of 52 μC cm−2, which may be one of the promising candidates for electron beam lithography.
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