Abstract
The introduction of the shaped beam imaging technique has greatly enhanced the exposure efficiency of electron beam (e-beam) lithography systems. The electron beam lithography systems from IBM provide the throughput capability needed for lithography applications in semiconductor fabrication lines. The resolution of these systems has steadily improved over the past 15 years, in support of the semiconductor trend towards submicron dimensions. This paper describes the latest version EL3 system, capable of fabricating 0.25-μm dimension features. The technical challenges of submicron e-beam lithography are discussed. A practical solution is described, with experimental results. The outlook for the future is also highlighted.
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