Abstract
This paper describes negative resistance switching in n-type silicon film resistors which contain linear arrays of grain boundaries. These linear arrays have been predictably located in the active region by a laser recrystallization procedure. The grain boundaries are made to bisect the resistors. Effects of parameters such as grain boundary number and grain-dopant concentration have been examined. We show that quasisaturated and asymmetrical I–V characteristics are exhibited by our resistors. This is evidence that the voltages across the depletion region and across the grain boundary layer are not equally divided on each side of the junction, and that dopants are nonuniformly incorporated in the grains during laser recrystallization.
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