Negative muon spin rotation study of acceptor centers in SiC

Abstract

The project aims at studying aluminum and boron acceptor impurities in silicon carbide. These impurities are modeled by muonic atoms formed via negative muon capture by Si or C atoms of the host material. To distinguish between the signals from muons captured by Si and C atoms the energy of characteristic X-rays emitted during the muon transition to the 1s atomic state is measured and used for histogram routing (X-ray triggered μSR). The first experimental results with an n-type 4H–SiC are reported.