Abstract
A description is given of the methods of fabrication of silicon carbide rectifiers with breakdown voltages of 100 – 600 V. The methods involve diffusion or alloying at relatively low temperatures, applied for long periods in order to reduce the impurity concentration gradients. Methods for the assembly and sealing of a silicon carbide diode in a metal—ceramic casing are described. The casing is evacuated before sealing and filled with an inert gas. The current— voltage and voltage—capacitance characteristics of a diode obtained in the temperature range from —70 to +500°C are given and briefly analyzed. The results indicate the presence of a wide compensated region near the p-n junctions in the silicon carbide rectifiers. The data obtained are used to determine the activation energy of aluminum (0.24–0.26 eV) and boron (0.39–0.40 eV) acceptor impurities in silicon carbide.
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