Negative differential resistance in high-power InGaN/GaN laser diode

Abstract

Negative differential resistance in InGaN/GaN ultraviolet laser diodes is demonstrated. Switching between the lower and upper branches of the S-shaped current-voltage characteristic leads to a change in the optical emission power by six orders of magnitude as the current increases from 3 to 15 mA. The occurrence of a negative differential resistance is explained by superlinear injection of charge carriers of the same sign into the high-resistance InGaN quantum well.