Abstract
A mechanism of inherent negative differential conductance (NDC) in tunnelling from a metal into 2D subband in a quantum well is proposed. NDC is a consequence of barrier height increase with bias for electrons tunnelling into 2D subband. The mechanism can bring to NDC in the HEMT-like structures with tunnelling between the gate and 2D channel. An example Al/δ-doped GaAs/AlGaAs structure is proposed and theoretical tunnel characteristics are presented.
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