Abstract
In the paper, we present the experimental data that demonstrate the conductance decrease with bias in the tunnel <i>Al/GaAs</i> Schottky structure with delta-n-doped 2D channel. The conductance is decreasing due to the increase in the tunnel-barrier height and the corresponding drop in the barrier tunnel transparency with bias. Theoretical calculations are in very good agreement with the experimental data, they also show that the mechanism should lead to the negative value of the differential conductance, if the separation between the subbands in the 2D channel is sufficiently large. The <i>Al/InAlGaAs/InAlAs</i> and <i>Ti/GaN/AlGaN</i> heterostructures with tunnel Schottky-barriers are suggested, where the negative differential conductance should be achievable.
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