Abstract
The surface voltage V of undoped amorphous silicon films has been measured as a function of the applied surface charge Q as in electrophotographic photoreceptor applications. It is found that the Q-V characteristic is nearly linear at low charge, but that the voltage saturates and eventually decreases with continued charging. This phenomenon of negative differential capacitance is explained by considering a field-dependent carrier generation and subsequent carrier transport in an amorphous solid. It is shown that the observed results arise from the buildup of space charge when the electron and the hole μτ products are sufficiently different.
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