Abstract
This study proposes negative capacitance vacuum channel transistors. The proposed negative capacitance vacuum channel transistors in which a ferroelectric capacitor is connected in series to the gate of the vacuum channel transistors have the following two advantages: first, adding a ferroelectric capacitor in series with a gate capacitor makes the turn-on voltage lower and on–off transition steeper without causing hysteresis effects. Second, the capacitance matching between a ferroelectric capacitor and a vacuum channel transistor becomes simplified because the capacitance of a vacuum channel transistor as seen from a ferroelectric capacitor is constant.
Highlights
Over the past 60 years of the semiconductor industry, the size of metal-oxide-semiconductor field-effect transistors (MOSFETs) has been scaled down obeying Moore’s law: feature sizes of transistors are scaled at a rate of approximately 0.7 times every 18 months
Low and high temperature and high levels of cosmic ray and radiation lead to catastrophic damage to the electronic systems without proper shielding packages. It is well-known that MOSFETs, which are the most widely used electronic devices, are difficult to use for these applications because they are vulnerable to radiation and temperature [1,2,3,4,5,6,7,8,9,10,11]
The low-voltage operation of negative capacitance vacuum channel transistors are simulated using the unique property of ferroelectric materials
Summary
Over the past 60 years of the semiconductor industry, the size of metal-oxide-semiconductor field-effect transistors (MOSFETs) has been scaled down obeying Moore’s law: feature sizes of transistors are scaled at a rate of approximately 0.7 times every 18 months. In the case of aerospace applications, many kinds of challenges from harsh environments exist. Low and high temperature and high levels of cosmic ray and radiation lead to catastrophic damage to the electronic systems without proper shielding packages. It is well-known that MOSFETs, which are the most widely used electronic devices, are difficult to use for these applications because they are vulnerable to radiation and temperature [1,2,3,4,5,6,7,8,9,10,11]. Even if state-of-the-art shielding methods can protect MOSFETs from harsh environments, the following issues still remain: large volume, large weight, high power consumption, and complex system design
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