Negative capacitance gate-all-around PZT silicon nanowire with high-K/metal gate MFIS structure for low SS and high I on/I off

Abstract

In the present work, a high-k dielectric hafnium dioxide and lead zirconate titanate (PZT) have been incorporated as a ferroelectric (FE) layer in the gate stack. The Ion/Ioff ratio obtained of the order of 1013, and the subthreshold swing 49.7 mV dec−1 are the most captivating findings of the device which outshines earlier findings. There is a significant improvement in the on-state current (I on) and off-state current (I off). Furthermore, comparatively high value of transconductance (g m) and transconductance generation factor (g m/I d), due to the incorporation of 20 nm PZT NC FE layer, insinuates that the device could be used in low power applications. These enticing findings of the proposed PZT GAA-NCFET nanowire could pave the way for low power devices.