Abstract
Negative Capacitance Field Effect Transistor (NCFET) is turned up as a potential semiconductor device for applications in the era of advanced VLSI/ULSI technology. NCFETs have been proven as one of the promising candidate in terms of to provide steep subthreshold-slope (below 60 mV/decade) among all of the FET devices. NCFET works on the phenomenon of increasing the internal capacitance without affecting transportation mechanism. Thus, similar switching at lower supply voltage (V}}$_{\mathbf{DD}}$ has been recorded for NCFET in comparison of conventional MOS (metal-oxide-semiconductor) transistor. As NCFET offers improved DC characteristics in terms of low leakage current and high ON-current at low supply voltage, it can lead to low power consumption and less switching voltage. The formation of NCFET can be completed by incorporating a ferroelectric (FE) material layer in the gate stack of CMOS devices. This ferroelectric material provides negative capacitance effect. The presented review article provide comparative review of NCFET with Tunnel FET and MOSFET.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call