Negative bias temperature instability on three oxide thicknesses (1.4/2.2/5.2 nm) with nitridation variations and deuteration

Abstract

In these experiments, we explored various methods of nitridation of thermal oxide. Rapid thermal oxidation (RTO), rapid thermal oxidation with nitric oxide (RTNO), remote plasma nitridation (RPN), and decoupled plasma nitridation (DPN) processes were performed, and the result on 1.4, 2.2, and 5.2 nm oxides was measured. It is shown that the initial threshold voltage and the shift during negative bias temperature instability (NBTI) stress are proportional to the nitrogen in the oxide. Not surprisingly the threshold voltage is dependent on the interfacial nitrogen, but it was also found that the NBTI shift depends on the total nitrogen incorporated throughout the bulk of the insulator. The thinnest oxide showed boron penetration for the unnitrided split, but also very low NBTI shift. Furthermore, wafers from each of the aforementioned nitridation variants were processed with and without deuterium passivation. Although the NFET hot–carrier response is substantially improved, no significant advantage in NBTI shift is observed.